Quantum size effect on photoluminescence and electroluminescence properties in organic multiple quantum wells
نویسندگان
چکیده
منابع مشابه
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
We have measured photoluminescence and electroluminescence in two different types of high-brightness single-quantum-well light emitting diodes manufactured by Nichia Chemical Industries with InxGa12xN active layers ~x50.45 and x50.15!, under hydrostatic pressures up to 8 GPa. We discovered that the pressure shift of the primary luminescence peak in each diode is very small: 12 and 16 meV/GPa fo...
متن کاملPhotoluminescence properties of a quantum system consisting of different size GaAs quantum wells
Photoluminescence properties of a quantum system consisting of four different size GaAs quantum wells (Lz=15, 7, 4.5 and 3 nm) clad by 50 nm thick Al0.24Ga0.76As barriers have been investigated by steady-state and time-resolved (TR) photoluminescence (PL) experiments at 13-300 K. It is found that the low temperature PL emission energy distribution is not uniform over the four excitonic emission...
متن کاملPhotoluminescence of tetrahedral quantum-dot quantum wells.
Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast...
متن کاملShort-wavelength photoluminescence and electroluminescence in Ga„Al...P/ GaP staggered type II quantum wells
Photoluminescence spectra of tailored Ga~A1!P/GaP quantum well heterostructures exhibit strong short-wavelength peaks at 363, 560, and 6002700 nm. The peak at 560 nm seems to originate from a no-phonon transition. All the transitions are observed up to 200 K. Light emitting diodes made with the same heterostructure predominently emit 560 nm light ~green! with a background of 700 nm ~red! at roo...
متن کاملPhotoluminescence Upconversion in GaAs Quantum Wells
We present a detailed experimental study of photoluminescence upconversion in GaAs quantum wells over a wide temperature range. The dependence of the upconversion on the well width is discussed and the conversion efficiency is determined as a function of laser detuning. The best results are achieved when the laser detuning is comparable to the thermal energy of the system, ∆E ≈ 2kBT .
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2008
ISSN: 1742-6596
DOI: 10.1088/1742-6596/109/1/012036